 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENA0878 2SC6106 SANYO Semiconductors DATA SHEET 2SC6106 Features * * * * NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage and high reliability. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW300s, duty cycle10% Tc=25C Conditions Ratings 1000 500 7 4 8 1 30 150 --55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=500V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.3A VCE=5V, IC=2.0A VCE=10V, IC=0.3A VCB=10V, f=1MHz 40 8 18 40 MHz pF Ratings min typ max 10 10 80 Unit A A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70407KB TI IM TC-00000387 No. A0878-1/4 2SC6106 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A IC=1mA, IE=0A IC=5mA, RBE= IE=1mA, IC=0A VCC=200V, 5IB1=-2.5IB2=IC=2A, RL=100 VCC=200V, 5IB1=-2.5IB2=IC=2A, RL=100 VCC=200V, 5IB1=-2.5IB2=IC=2A, RL=100 1000 500 8 0.5 3.0 0.3 Ratings min typ max 1.0 1.5 Unit V V V V V s s s Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 0.5 4 4 7.0 1.5 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit IB1 OUTPUT IB2 VR RB PW=20s D.C.1% INPUT RL 100 + 470F VCC=200V 50 + 100F VBE= --5V 4.0 3.5 IC -- VCE 500mA 400mA Collector Current, IC -- A 4 IC -- VBE VCE=5V Collector Current, IC -- A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 300mA 200mA 100mA 50mA 20mA 3 2 1 Ta= 120 C 25C IB=0mA 9 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT12742 Collector-to-Emitter Voltage, VCE -- V IT12741 Base-to-Emitter Voltage, VBE -- V --40C No. A0878-2/4 2SC6106 2 hFE -- IC VCE=5V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 1.0 7 5 3 2 0.1 7 5 VCE(sat) -- IC IC / IB=5 100 7 Ta=120C DC Current Gain, hFE 5 3 2 --40C 10 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT12743 Ta= -4 0C --4 C 25 C 0 120C 25C 2 3 5 7 0.1 2 3 5 3 2 0.01 7 1.0 Ta=1 20C 2 3 5 25C 7 Collector Current, IC -- A 3 VBE(sat) -- IC Collector Current, IC -- A 10 7 5 IT12744 SW Time -- IC IC / IB=5 Switching Time, SW Time -- s Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 2 1.0 7 5 3 2 0.1 7 5 tstg VCC=200V IC/IB2= 5 IB2/IB1= 2.5 1.0 7 5 Ta= --40C 25C 120C tf 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 10 7 5 Forward Bias A S O ICP=8A IC=4A P C= 30 1m Collector Current, IC -- A 5 7 10 IT12745 3 0.1 2 3 5 7 1.0 2 3 5 2 Reverse Bias A S O Collector Current, IC -- A 7 10 IT12746 <50s 10 Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 s W DC s 10 ms tio n era op 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT12747 2 0.1 1.0 Tc=25C IB2= --0.6A L=500mH 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 Collector-to-Emitter Voltage, VCE -- V 1.2 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 35 IT12748 PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.0 30 25 0.8 No 0.6 he 20 at sin k 15 0.4 10 0.2 5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 0 Ambient Temperature, Ta -- C IT12749 Case Temperature, Tc -- C IT12750 No. A0878-3/4 2SC6106 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. PS No. A0878-4/4 |
Price & Availability of 2SC6106
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |